The process to make nanocrystals with an average size <5 nm and a spatial density was proposed using agglomeration and partial oxidation of thin amorphous layer deposited in between the layers by low pressure chemical vapor deposition. The reason to use an amorphous layer is to make it possible to deposit a thin continuous layer with a thickness of less than 5 nm. alloy layer was used to control the spatial density of the nanocrystals by using selective oxidation of Si in alloy layer. The single electron memory, similar to a flash type memory device was fabricated using these nanocrystals. The Coulomb blockade effect could be clearly observed at room temperature with a threshold voltage shift of about 2.4 V, which demonstrated the formation of nanocrystals with a high spatial density.
High spatial density nanocrystal formation using thin layer of amorphous deposited on
Tae-Sik Yoon, Jang-Yeon Kwon, Dong-Hoon Lee, Ki-Bum Kim, Seok-Hong Min, Dong-Hyuk Chae, Dae Hwan Kim, Jong Duk Lee, Byung-Gook Park, Hwack Joo Lee; High spatial density nanocrystal formation using thin layer of amorphous deposited on . J. Appl. Phys. 1 March 2000; 87 (5): 2449–2453. https://doi.org/10.1063/1.372200
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