Impact ionization plays a crucial role for electron transport in semiconductors at high electric fields. We derive appropriate quantum kinetic equations for electron transport in semiconductors within linear response theory. The field-dependent collision integral is evaluated for the process of impact ionization. A known, essentially analytical result is reproduced within the parabolic band approximation [W. Quade et al., Phys. Rev. B 50, 7398 (1994)]. Based on the numerical results for zero field strengths but realistic band structures, a fit formula is proposed for the respective field-dependent impact ionization rate. Explicit results are given for GaAs, Si, GaN, ZnS, and SrS.
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Research Article| January 15 2000
Field effect on the impact ionization rate in semiconductors
J. R. Madureira;
S. M. Goodnick;
R. Redmer, J. R. Madureira, N. Fitzer, S. M. Goodnick, W. Schattke, E. Schöll; Field effect on the impact ionization rate in semiconductors. J. Appl. Phys. 15 January 2000; 87 (2): 781–788. https://doi.org/10.1063/1.371941
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