We have studied the strain effects on the structural and magnetotransport properties of (PSMO) thin films. The PSMO films were epitaxially grown on (001), (001), and (110) substrates that induce biaxial compressive, tensile, and almost no strain in the films, respectively. The film thickness t, varied between 4–400 nm, was used as another controlling parameter of strain for each type of film. There exist two distinct thickness ranges with different thickness dependence of the magnetotransport properties. For nm, the zero-field resistance peak temperature and the high-field magnetoresistance (HFMR) properties are critically dependent on the thickness and the substrate. For nm, the and the HFMR ratio show weak t dependence. The results show evidence for the effects of the Jahn–Teller type distortion as well as disorders on the resistive transition temperature and the HFMR.
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15 May 2000
Research Article|
May 15 2000
Role of strain in magnetotransport properties of thin films
H. S. Wang;
H. S. Wang
Department of Physics, Pennsylvania State University, University Park, Pennsylvania 16802
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E. Wertz;
E. Wertz
Department of Physics, Pennsylvania State University, University Park, Pennsylvania 16802
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Y. F. Hu;
Y. F. Hu
Department of Physics, Pennsylvania State University, University Park, Pennsylvania 16802
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Qi Li;
Qi Li
Department of Physics, Pennsylvania State University, University Park, Pennsylvania 16802
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D. G. Schlom
D. G. Schlom
Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802-5005
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J. Appl. Phys. 87, 7409–7414 (2000)
Article history
Received:
August 18 1999
Accepted:
January 28 2000
Citation
H. S. Wang, E. Wertz, Y. F. Hu, Qi Li, D. G. Schlom; Role of strain in magnetotransport properties of thin films. J. Appl. Phys. 15 May 2000; 87 (10): 7409–7414. https://doi.org/10.1063/1.373002
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