Time-resolved photoluminescence decay caused by carrier trapping to the deep Fe level has been studied in epitaxial GaInP. Carrier trapping time is found to be strongly dependent on the Fe concentration up to 1×1018cm−3. The electron capture cross section for the neutral iron level Fe3+, evaluated from the luminescence transients, is in the range from 6×10−16 to 1×10−15cm2 for the temperature interval 70–250 K.

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