We investigate several factors that determine the surface morphology in heteroepitaxial growth of films on Si, which include composition, temperature, and pressure. Phase boundary lines are derived that define the regions for planar and island growth in terms of composition–temperature and composition–pressure. Also derived is the roughening characteristic length as a function of temperature, pressure, and characteristic time. Our results can explain the literature data satisfactorily.
REFERENCES
1.
C.
Teichert
, L. J.
Peticolas
, J. C.
Bean
, J.
Tersoff
, and M. G.
Lagally
, Phys. Rev. B
53
, 16
334
(1996
).2.
R.
Chelly
, J.
Werckmann
, T.
Angot
, P.
Louis
, D.
Bolmont
, and J. J.
Koulmann
, Thin Solid Films
294
, 84
(1997
).3.
J.
Tersoff
and F. K.
LeGoues
, Phys. Rev. Lett.
72
, 3570
(1994
).4.
A. J.
Pidduck
, D. J.
Robbins
, A. G.
Cullis
, W. Y.
Leong
, and A. M.
Pitt
, Thin Solid Films
222
, 78
(1992
).5.
D. E.
Jesson
, K. M.
Chen
, S. J.
Pennycook
, T.
Thundat
, and R. J.
Warmack
, Science
268
, 1161
(1995
).6.
N. E.
Lee
, D. G.
Cahill
, and J. E.
Greene
, J. Appl. Phys.
80
, 2199
(1996
).7.
C. W.
Snyder
, J. F.
Mansfield
, and B. G.
Orr
, Phys. Rev. B
46
, 9551
(1992
).8.
9.
10.
J. C.
Bean
, L. C.
Feldman
, A. T.
Fiory
, S.
Nakahara
, and I. K.
Robinson
, J. Vac. Sci. Technol. A
2
, 436
(1984
).11.
A. V.
Latyshev
, A. B.
Krasilnikov
, and A. L.
Aseev
, Phys. Rev. B
54
, 2586
(1996
).12.
M.
Caymax
, J.
Poortmans
, A.
Van Ammel
, J.
Vanhellemont
, M.
Libezny
, J.
Nijs
, and R.
Mertens
, Thin Solid Films
241
, 335
(1994
).13.
D.
Dutartre
, P.
Warren
, F.
Chollet
, F.
Gisbert
, M.
Berenguer
, and I.
Berbezier
, J. Cryst. Growth
142
, 78
(1994
).
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1998
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