A two-step process consisting of low temperature growth followed by rapid thermal annealing is demonstrated for ferroelectric capacitors directly on silicon. PLZT is a promising material for Gbit-scale ferroelectric memories, but its growth on silicon has proved challenging. The two-step process is designed to enable nucleation of perovskite phase PLZT while limiting diffusion which often leads to device failure. Minimization of stress and interdiffusion during film growth were necessary to optimize the remanent polarization. capacitors with remanent polarizations up to were grown on Ru/Si at 400 °C and 50 mTorr using pulsed laser deposition. Direct high temperature growth (>600 °C) was not possible due to interface reactions, and film cracking was observed at low temperatures as well as at high and low oxygen pressures.
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15 July 1998
Research Article|
July 15 1998
Simple Ru electrode scheme for ferroelectric capacitors directly on silicon Available to Purchase
Jordana Bandaru;
Jordana Bandaru
Department of Materials Science and Mineral Engineering, University of California, Berkeley, California 94720
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Timothy Sands;
Timothy Sands
Department of Materials Science and Mineral Engineering, University of California, Berkeley, California 94720
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Loucas Tsakalakos
Loucas Tsakalakos
Department of Materials Science and Mineral Engineering, University of California, Berkeley, California 94720
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Jordana Bandaru
Department of Materials Science and Mineral Engineering, University of California, Berkeley, California 94720
Timothy Sands
Department of Materials Science and Mineral Engineering, University of California, Berkeley, California 94720
Loucas Tsakalakos
Department of Materials Science and Mineral Engineering, University of California, Berkeley, California 94720
J. Appl. Phys. 84, 1121–1125 (1998)
Article history
Received:
December 08 1997
Accepted:
April 08 1998
Citation
Jordana Bandaru, Timothy Sands, Loucas Tsakalakos; Simple Ru electrode scheme for ferroelectric capacitors directly on silicon. J. Appl. Phys. 15 July 1998; 84 (2): 1121–1125. https://doi.org/10.1063/1.368112
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