We report combined studies of the influence of chemical and physical treatments on the properties of indium–tin oxide (ITO) thin films. The ITO films were also used as transparent anodes of polymeric light-emitting diodes (LEDs) incorporating poly(p-phenylene vinylene) (PPV) as the emitter material, with, or without, doped poly(3,4-ethylene dioxythiophene) (PEDOT) as a hole-injection/transport layer. Structures based on a soluble green derivative of PPV, poly(4,4-diphenylene diphenylvinylene) were also tested. We studied chemical (aquaregia, degreasing, RCA protocol) and physical (oxygen and argon plasmas, Teflon, and paper rubbing) treatments and, in contrast to recently published work, we find that for Balzer Baltracon ITO, oxygen plasma and not aquaregia yields the highest efficiencies and luminances and the lowest drive voltages. For oxygen-plasma-treated anodes, the device efficiency clearly correlates with the value of the ITO surface work function, which in turn depends on the time of treatment. Interestingly, we find that work-function variations induced by our oxygen-plasma treatment are unchanged after long-term storage in air and in the dark. Unexpectedly, we also find that devices incorporating a PEDOT layer benefit from an appropriate treatment of the ITO surface, for both efficiency and lifetime. The results shed light on the physics of conjugated, organic semiconductors and related devices, and in particular on the presence and the role of an anodic energy barrier on the LEDs mechanism of operation. We also discuss the implications of our integrated experimental study in relation to the modification of the ITO sheet resistance, surface and bulk composition, and surface morphology.

1.
J. H.
Burroughes
,
D. D. C.
Bradley
,
A. R.
Brown
,
R. N.
Marks
,
K.
Mackay
,
R. H.
Friend
,
P. L.
Burn
, and
A. B.
Holmes
,
Nature (London)
347
,
539
(
1990
).
2.
C. W.
Tang
and
S. A.
VanSlyke
,
Appl. Phys. Lett.
51
,
913
(
1987
).
3.
F.
Cacialli
,
R. H.
Friend
,
S. C.
Moratti
, and
A. B.
Holmes
,
Synth. Met.
67
,
157
(
1994
).
4.
Y.
Hamada
,
T.
Sano
,
K.
Shibata
, and
K.
Kuroki
,
Jpn. J. Appl. Phys., Part 2
34
,
L824
(
1995
).
5.
B. H.
Cumpston
and
K. F.
Jensen
,
Synth. Met.
73
,
195
(
1995
).
6.
B. H.
Cumpston
and
K. F.
Jensen
,
Appl. Phys. Lett.
69
,
394
(
1996
).
7.
C.
Adachi
,
K.
Nagai
, and
N.
Tamoto
,
Appl. Phys. Lett.
66
,
2679
(
1995
).
8.
J. C.
Scott
,
J. H.
Kaufman
,
J.
Salem
,
J. A.
Goitia
,
P. J.
Brock
, and
R.
Dipietro
,
Mol. Cryst. Liq. Cryst. Sci. Technol., Sect. A
283
,
57
(
1996
).
9.
J. C.
Scott
,
J. H.
Kaufman
,
P. J.
Brock
,
R.
Dipietro
,
J.
Salem
, and
J. A.
Goitia
,
J. Appl. Phys.
79
,
2745
(
1996
).
10.
H.
Aziz
and
G.
Xu
,
Synth. Met.
80
,
7
(
1996
).
11.
B. H.
Cumpston
and
K. F.
Jensen
,
Trends Polym. Sci.
4
,
151
(
1996
).
12.
C. I.
Chao
,
K. R.
Chuang
, and
S. A.
Chen
,
Appl. Phys. Lett.
69
,
2894
(
1996
).
13.
L.
Abate
,
S.
Calanna
,
A.
Pollicino
, and
A.
Recca
,
Macromol. Chem. Phys.
198
,
1437
1454
(
1997
).
14.
J. C.
Carter
,
I.
Grizzi
,
S. K.
Heeks
,
D. J.
Lacey
,
S. G.
Latham
,
P. G.
May
,
O. R.
Delospanos
,
K.
Pichler
,
C. R.
Towns
, and
H. F.
Wittmann
,
Appl. Phys. Lett.
71
,
34
(
1997
).
15.
A.
Berntsen
,
Y.
Croonen
,
R.
Cuijpers
,
B.
Habets
,
C.
Liedenbaum
,
H.
Schoo
,
R. J.
Visser
,
J.
Vleggaar
, and
P. v. d.
Weijer
,
Proc. SPIE
3148
,
264
(
1997
).
16.
S. A.
Van Slyke
,
C. H.
Chen
, and
C. W.
Tang
,
Appl. Phys. Lett.
69
,
2160
(
1996
);
and
J.
Shi
and
C. W.
Tang
,
Appl. Phys. Lett.
70
,
1665
(
1997
).
17.
V.
Cimrova
and
D.
Neher
,
Synth. Met.
76
,
125
(
1996
).
18.
I.
Hamberg
and
C. G.
Granqvist
,
J. Appl. Phys.
60
,
R123
(
1986
).
19.
J. R.
Bellingham
,
W. A.
Phillips
, and
C. J.
Adkins
,
J. Mater. Sci. Lett.
11
,
263
(
1992
).
20.
S. A.
Carter
,
J. C.
Scott
, and
P. J.
Brock
,
Appl. Phys. Lett.
71
,
1145
(
1997
).
21.
S.
Karg
,
J. C.
Scott
,
J. R.
Salem
, and
M.
Angelopoulos
,
Synth. Met.
80
,
111
(
1996
).
22.
C. C.
Wu
,
C. I.
Wu
,
J. C.
Sturm
, and
A.
Kahn
,
Appl. Phys. Lett.
70
,
1348
(
1997
).
23.
S.
Fujita
,
T.
Sakamoto
,
K.
Ueda
,
K.
Ohta
, and
S.
Fujita
,
Jpn. J. Appl. Phys., Part 1
36
,
350
(
1997
).
24.
F.
Li
,
H.
Tang
,
J.
Shinar
,
O.
Resto
, and
S. Z.
Weisz
,
Appl. Phys. Lett.
70
,
2741
(
1997
).
25.
K.
Furukawa
,
Y.
Terasaka
,
H.
Ueda
, and
M.
Matsumura
,
Synth. Met.
91
,
99
(
1997
).
26.
J.
Gmeiner
,
S.
Karg
,
M.
Meier
,
W.
Riess
,
P.
Strohriegl
, and
M.
Schwoerer
,
Acta Polym.
44
,
201
(
1993
).
27.
M.
Herold
,
J.
Gmeiner
, and
M.
Schwoerer
,
Acta Polym.
47
,
436
(
1996
).
28.
C. Y. Chang and S. M. Sze, ULSI Technology (McGraw-Hill, Singapore, 1996).
29.
W. J.
Feast
,
I. S.
Millichamp
,
R. H.
Friend
,
M. E.
Horton
,
D.
Phillips
,
S. D. D. V.
Rughooputh
, and
G.
Rumbles
,
Synth. Met.
10
,
181
(
1985
).
30.
F.
Jonas
and
L.
Schrader
,
Synth. Met.
41
,
831
(
1991
).
31.
G.
Heywang
and
F.
Jonas
,
Adv. Mater.
4
,
116
(
1992
).
32.
S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, Singapore, 1981).
33.
K. Z.
Xing
,
M.
Fahlman
,
X. W.
Chen
,
O.
Inganas
, and
W. R.
Salaneck
,
Synth. Met.
89
,
161
(
1997
).
34.
E. W.
Plummer
,
Top. Appl. Phys.
4
,
25
(
1975
).
35.
C. S. Fadley, in Electron Spectroscopy: Theory, Techniques and Applications, edited by C. R. Brundle and A. D. Baker (Academic, London, 1978), p. 1.
36.
J. C.
deMello
,
H. F.
Wittmann
, and
R. H.
Friend
,
Adv. Mater.
9
,
230
(
1997
).
37.
A.
Andersson
,
N.
Johansson
,
P.
Bröms
,
N. Yu, D.
Lupo
, and
W. R.
Salaneck
,
Adv. Mater.
10
,
77
(
1998
).
38.
P. A. Cox, The Electronic Structure and Chemistry of Solids (Oxford University Press, New York, 1987).
39.
T.
Ishida
,
H.
Kobayashi
, and
Y.
Nakato
,
J. Appl. Phys.
73
,
4344
(
1993
).
40.
N. C.
Greenham
,
I. D. W.
Samuel
,
G. R.
Hayes
,
R. T.
Phillips
,
Y. A. R. R.
Kessener
,
S. C.
Moratti
,
A. B.
Holmes
, and
R. H.
Friend
,
Chem. Phys. Lett.
241
,
89
(
1995
).
41.
J. H. F.
Martens
,
D. A.
Halliday
,
E. A.
Marseglia
,
D. D. C.
Bradley
,
R. H.
Friend
,
P. L.
Burn
,
A. B.
Holmes
, and
A.
Kraft
,
Synth. Met.
55–57
,
434
(
1993
).
42.
A.
Berntsen
,
P. v. d.
Weijer
,
Y.
Croonen
,
C.
Liedenbaum
, and
J.
Vleggaar
,
Opt. Mater.
9
,
125
(
1998
).
43.
S. A.
Carter
,
M.
Angelopoulos
,
S.
Karg
,
P. J.
Brock
, and
J. C.
Scott
,
Appl. Phys. Lett.
70
,
2067
(
1997
).
44.
J. C.
Scott
,
S.
Karg
, and
S. A.
Carter
,
J. Appl. Phys.
82
,
1454
(
1997
).
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