Semiconductors differ widely in their ability to be doped. As their band gap increases, it is usually possible to dope them either n or p type, but not both. This asymmetry is documented here, and explained phenomenologically in terms of the “doping pinning rule.”

1.
J.
Hu
and
R. G.
Gordon
,
J. Appl. Phys.
72
,
5381
(
1992
).
2.
W. S.
Baer
,
Phys. Rev.
154
,
785
(
1967
).
3.
Z.
Kawazu
,
Y.
Kawakami
,
T.
Taguchi
, and
A.
Hiraki
,
Mater. Sci. Forum
38–41
,
555
(
1989
).
4.
H.
Kukimoto
et al.,
J. Phys. Chem. Solids
29
,
935
(
1968
).
5.
J.
Qui
et al.,
Appl. Phys. Lett.
59
,
2992
(
1991
).
6.
W.
Faschinger
,
S.
Ferreira
, and
H.
Sitter
,
Appl. Phys. Lett.
64
,
2682
(
1994
).
7.
M.
Sondergeld
,
Phys. Status Solidi B
81
,
253
(
1977
).
8.
P. J.
Dean
et al.,
Phys. Rev. B
23
,
4888
(
1981
).
9.
H.
Ogawa
et al.,
Jpn. J. Appl. Phys., Part 2
33
,
L980
(
1994
).
10.
M.
Aven
and
B.
Segall
,
Phys. Rev.
130
,
81
(
1963
).
11.
S.
Nakashima
,
T.
Hattori
, and
Y.
Yamagudi
,
Solid State Commun.
25
,
137
(
1978
).
12.
W. P.
Shen
and
H. S.
Kwok
,
Mater. Res. Soc. Symp. Proc.
340
,
457
(
1994
).
13.
R.
Dalven
,
Phys. Status Solidi B
48
,
K23
(
1971
).
14.
T.
Ohtsuka
et al.,
Appl. Phys. Lett.
65
,
466
(
1994
).
15.
H.
Wyands
and
M.
Cocivera
,
J. Electrochem. Soc.
139
,
2052
(
1992
).
16.
N. Miura, G. Kido, and S. Chikazumi, in Physics of Semiconductors 1978, edited by B. L. M. Wilson (Inst. Physics, London, UK, 1979), p. 1109.
17.
R. B.
Hall
and
H. H.
Woodbury
,
J. Appl. Phys.
39
,
5361
(
1968
).
18.
F.
Fischer
et al.,
J. Cryst. Growth
141
,
93
(
1994
).
19.
B. Segall and D. T. F. Marple, in Physics and Chemistry of II–VI Compounds, edited by M. Aven and J. S. Prener (Amsterdam, North Holland, 1967), p. 317.
20.
A. D.
Stuckes
and
G.
Farrell
,
J. Phys. Chem. Solids
25
,
477
(
1963
).
21.
A. M.
Abo El Soud
,
H. A.
Zayed
, and
L. I.
Soliman
,
Thin Solid Films
229
,
232
(
1993
).
22.
B.
Tell
,
J. L.
Shay
, and
H. M.
Kasper
,
J. Appl. Phys.
43
,
2469
(
1972
).
23.
G. P.
Sanchez Porras
and
S. M.
Wasim
,
Phys. Status Solidi A
59
,
K175
(
1980
).
24.
C.
Rincon
and
G.
Sanchez Perez
,
Sol. Cells
16
,
367
(
1986
).
25.
H.
Neumann
et al.,
Phys. Status Solidi B
108
,
483
(
1981
).
26.
H.
Weinert
,
H.
Neumann
,
H.-J.
Hobler
,
G.
Kuhn
, and
N. V.
Nam
,
Phys. Status Solidi B
81
,
K59
(
1977
).
27.
G. Marin, S. M. Wasim, G. Sanchez Perez, P. Bocaranda, and A. E. Mora (unpublished).
28.
B. A.
Mansour
and
M. A.
El-Hagary
,
Thin Solid Films
256
,
165
(
1995
).
29.
W.
Walukiewicz
,
J. Vac. Sci. Technol. B
5
,
1062
(
1987
).
30.
J. A. Van Vechten, in Handbook of Semiconductors, edited by S. P. Keller (North Holland, Amsterdam, 1980), Vol. 3, p. 1.
31.
G. A.
Baraff
and
M.
Schluter
,
Phys. Rev. Lett.
55
,
1327
(
1985
).
32.
S. B.
Zhang
and
J. E.
Northrup
,
Phys. Rev. Lett.
67
,
2339
(
1991
).
33.
C. Kittel, in Introduction to Solid State Physics, 6th ed. (Wiley, Singapore, 1986), pp. 202–3; The relations between EF(n/p) and EF are: EF(n)+Eg=EF, where Eg is the band gap and −EF(p)=EF.
34.
M.
Caldas
,
A.
Fazzio
, and
A.
Zunger
,
Appl. Phys. Lett.
45
,
671
(
1984
).
35.
A.
Zunger
,
Annu. Rev. Mater. Sci.
15
,
411
(
1985
).
36.
A.
Zunger
,
Phys. Rev. Lett.
54
,
849
(
1985
).
37.
J. M.
Langer
and
H.
Heinrich
,
Phys. Rev. Lett.
55
,
1414
(
1985
).
38.
W.
Walukiewicz
,
Appl. Phys. Lett.
54
,
2094
(
1989
).
39.
W.
Faschinger
,
S.
Ferreira
, and
H.
Sitter
,
J. Cryst. Growth
151
,
267
(
1995
).
40.
D. M.
Ceperly
and
B. J.
Alder
,
Phys. Rev. Lett.
45
,
566
(
1980
).
41.
J. P.
Perdew
and
A.
Zunger
,
Phys. Rev. B
23
,
5048
(
1981
).
42.
S.-H.
Wei
and
H.
Krakauer
,
Phys. Rev. Lett.
55
,
1200
(
1985
), and references therein.
43.
S.-H.
Wei
and
A.
Zunger
,
Appl. Phys. Lett.
63
,
2549
(
1993
).
44.
For II–VIs, the experimental data are quoted from
J. K.
Furdyna
,
J. Appl. Phys.
64
,
R29
(
1988
).
For chalcopyrites, the experimental data are quoted from
J. E.
Jaffe
and
A.
Zunger
,
Phys. Rev. B
29
,
1882
(
1984
);
L.
Garbato
,
F.
Ledda
, and
R.
Rucci
,
Prog. Cryst. Growth Charact.
15
,
1
(
1987
).
45.
W.
Walukiewicz
,
J. Cryst. Growth
159
,
244
(
1996
).
46.
S.-H.
Wei
and
A.
Zunger
,
J. Appl. Phys.
78
,
3846
(
1995
).
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