Two-dimensional temperature maps of reactive gas layers were produced using pulsed laser Rayleigh scattering thermometry. The measurements were made in conditions of diamond film chemical vapor deposition (CVD) using a thermal inductively coupled plasma. In these conditions, the reactive gas layer is typically a few millimeters thick and the temperature drops across the layer from 4000 K at the free stream boundary to about 1200 K at the substrate. The reactive layer exhibits strong chemical nonequilibrium. Rayleigh scattering was induced using a pulsed laser sheet at 532 nm wavelength. The scattered radiation was detected and calibrated with an intensified charge coupled device camera. Temperature maps and axial profiles obtained under parametric variation of the gas flow conditions demonstrate how the technique can be employed to measure the reactive layer thickness and its radial distribution across the substrate. The results demonstrate that imaging Rayleigh scattering thermometry can be employed as a nonintrusive diagnostic tool to obtain useful experimental information pertinent to the gas phase chemistry in diamond CVD under conditions of extremely large temperature gradients.
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1 October 1997
Research Article|
October 01 1997
Temperature mapping of reactive gas layer in thermal plasma chemical vapor deposition
Jussi Larjo;
Jussi Larjo
Department of Physics, Plasma Technology Laboratory, Tampere University of Technology, Post Office Box 692, 33101 Tampere, Finland
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Joachim Walewski;
Joachim Walewski
Department of Physics, Plasma Technology Laboratory, Tampere University of Technology, Post Office Box 692, 33101 Tampere, Finland
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Rolf Hernberg
Rolf Hernberg
Department of Physics, Plasma Technology Laboratory, Tampere University of Technology, Post Office Box 692, 33101 Tampere, Finland
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J. Appl. Phys. 82, 3560–3566 (1997)
Article history
Received:
March 24 1997
Accepted:
July 01 1997
Citation
Jussi Larjo, Joachim Walewski, Rolf Hernberg; Temperature mapping of reactive gas layer in thermal plasma chemical vapor deposition. J. Appl. Phys. 1 October 1997; 82 (7): 3560–3566. https://doi.org/10.1063/1.365687
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