Substrate materials used for growing diamond films were observed to modify thin films’ electron field emission properties significantly. Using heavily doped silicon (LR-Si) as a substrate lowered the turn-on field from to and increased the emission current density from to (at 16 V/μm). However, electron field emission properties can be further improved only by using Au precoatings to modify the characteristics of interfacial layer. The turn-on field was lowered further to and emission current density was increased further to (at 16 V/μm). Secondary ion mass spectroscopic examination indicated that the main interaction is the outward diffusion of Au species into amorphous carbon layer, lowering the resistivity of this interfacial layer. The electrons can therefore be transported easily from Si substrate across the interfacial layer to the diamonds and subsequently field emitted.
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1 October 1997
Research Article|
October 01 1997
Effect of substrate materials on the electron field emission characteristics of chemical vapor deposited diamond films
Jau-Sung Lee;
Jau-Sung Lee
Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu 30043, Taiwan, Republic of China
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Kuo-Shung Liu;
Kuo-Shung Liu
Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu 30043, Taiwan, Republic of China
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I-Nan Lin
I-Nan Lin
Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu 30043, Taiwan, Republic of China
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Journal of Applied Physics 82, 3310–3313 (1997)
Article history
Received:
October 28 1996
Accepted:
June 25 1997
Citation
Jau-Sung Lee, Kuo-Shung Liu, I-Nan Lin; Effect of substrate materials on the electron field emission characteristics of chemical vapor deposited diamond films. Journal of Applied Physics 1 October 1997; 82 (7): 3310–3313. https://doi.org/10.1063/1.365639
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