High quality GaN epitaxial layers were grown on 6H–SiC substrates by using low-pressure metalorganic chemical vapor deposition method. Samples employing a three-period as a buffer layer produce a good quality GaN epitaxial layer, with mobility and carrier concentration of and (at 300 K), respectively. The enhanced electron mobility in the heterostructures is also observed. By using the van der Pauw method of Hall measurement, the sheet carrier density and mobility at 4.2 K for the heterostructure are and respectively. Strong SdH (Shubnikov–de Haas) oscillations were observed to confirm the two-dimensional electron gas (2DEG) phenomenon at the AlGaN/GaN top heterointerface. In addition, an extra SdH oscillation also resulted from the high-quality 2DEG channel of the GaN/AlGaN bottom heterointerface.
Growth and characterizations of GaN on SiC substrates with buffer layers
C. F. Lin, H. C. Cheng, G. C. Chi, M. S. Feng, J. D. Guo, J. Minghuang Hong, C. Y. Chen; Growth and characterizations of GaN on SiC substrates with buffer layers. J. Appl. Phys. 1 September 1997; 82 (5): 2378–2382. https://doi.org/10.1063/1.366048
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