Interstitial compounds, with or Si and were investigated by Mössbauer spectroscopy at room temperature. In the analysis of the spectra, the preferential occupation by Al or Si of the Fe sites in the hexagonal phase was taken into account. The hyperfine parameters variations are discussed on the grounds of local crystallographic details at the inequivalent iron sites, altered by the composition modifications. The low values of the isomer shifts and quadrupole interactions suggest small electronic charge redistribution in as compared to However, the isomer shift variations upon Wigner–Seitz cell volume changes evidence for screening and electron transfer effects. In order to provide a more consistent picture of the local effects of interstitial versus substitutional atoms in compounds, the discussion of the present results is extended to Mössbauer data obtained on the parent compounds and their nitrides.
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15 December 1997
Research Article|
December 15 1997
Local effects of interstitial versus substitutional atoms in compounds, with or Si and or N
N. Plugaru;
N. Plugaru
National Institute of Materials Physics, P.O. Box MG-07, 76900-Bucharest, Romania
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M. Morariu;
M. Morariu
National Institute of Materials Physics, P.O. Box MG-07, 76900-Bucharest, Romania
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A. Galatanu;
A. Galatanu
National Institute of Materials Physics, P.O. Box MG-07, 76900-Bucharest, Romania
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D. P. Lazar;
D. P. Lazar
National Institute of Materials Physics, P.O. Box MG-07, 76900-Bucharest, Romania
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D. Barb
D. Barb
National Institute of Materials Physics, P.O. Box MG-07, 76900-Bucharest, Romania
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J. Appl. Phys. 82, 6193–6202 (1997)
Article history
Received:
April 08 1997
Accepted:
September 12 1997
Citation
N. Plugaru, M. Morariu, A. Galatanu, D. P. Lazar, D. Barb; Local effects of interstitial versus substitutional atoms in compounds, with or Si and or N. J. Appl. Phys. 15 December 1997; 82 (12): 6193–6202. https://doi.org/10.1063/1.366504
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