$p–n$ and $p–n–p$ junction arrays in $CuInSe2$ crystals: Cathodoluminescence and capacitance study Available to Purchase

Microstructures in $p-CuInSe2$ single crystals tailored by a strong electric field have been studied using the methods of local cathodoluminescence, electron-beam-induced current (EBIC), capacitance–voltage (⁠$C–V$⁠) characteristics, and deep-level transient spectroscopy (DLTS) spectra, and have been considered through a prism of elemental stability in the ternary compound. The shortest-wavelength cathodoluminescence radiation $(ℏωm=1.023 eV)$ is observed from a layer of $n$ type, the longer-wavelength radiation (⁠$ℏωm=1.01$ and 0.973 eV), from $p$-type areas, both a $p$ layer and the $p$-bulk crystal. The analysis of the spectra has allowed us to attribute experimental features to optical transitions associated with donor and acceptor levels of $VCu,$ $VSe,$ $Cui$ point defects. The capacitance study by the $C–V$ characteristics and DLTS spectra as well as the EBIC test have shown formation of diode-type or transistor-type microstructures. The $|ND−NA|$ concentration profile, thermal activation, and emission energies of 22–25 and 170 meV, and a capture cross-section $σh=2×10−19 cm2$ of the deep donor level have been obtained for the microstructures. The two-stage resistive model has been considered for $p–n$ and $p–n–p$ junction formation.