Analysis of a high-T_c hot-electron superconducting mixer for terahertz applications Available to Purchase

The prospects of a YBa₂Cu₃O_7−δ hot-electron bolometer mixer for a THz heterodyne receiver are discussed. The modeled device is a submicron bridge made from a 10-nm-thick film on a high thermal conductance substrate. The mixer performance expected for this device is analyzed in the framework of a two-temperature model which includes heating both of the electrons and the lattice. Also, the contribution of phonon diffusion from the film through the substrate and from the film to the normal metal contacts is evaluated. The intrinsic conversion efficiency and the noise temperature have been calculated as functions of the device size, local oscillator (LO) power, and ambient temperature. Assuming thermal fluctuations and Johnson noise to be the main sources of noise, a minimum single sideband mixer noise temperature of ≅2000 K is predicted. For our modeled device the intrinsic conversion loss at an intermediate frequency of 2.5 GHz is less than 10 dB and the required LO power is ∼1–10 μW.