Dependence of InGaP/InGaAlP heterointerface smoothness on substrate misorientation

InGaP/InGaAlP single quantum wells (SQWs) were fabricated on (100)GaAs substrates misoriented towards the [011] direction at different growth rates. Photoluminescence (PL) measurements were carried out at 4.2 K to investigate dependence of the interface smoothness on substrate misorientation and growth rate for InGaP/InGaAlP SQWs. It has been found that the PL linewidth of the SQWs becomes a minimum value in the 10°–40° substrate misorientation range. This means the smoothest InGaP/InGaAlP heterointerface can be obtained on these misoriented substrates. It has also been found that the heterointerface can be improved with reduced growth rate.