Strain and structural characterization of Zn_1−xCd_xSe laser structures grown on GaAs and InGaAs (001) substrates Available to Purchase

X‐ray reciprocal space mapping has been used to investigate the strain status of microgun‐pumped blue and blue‐green laser structures. The devices exploit graded‐index, separate confinement Zn_1−xCd_xSe/ZnSe heterostructures grown on InGaAs or GaAs substrates by molecular‐beam epitaxy. The location of the reciprocal lattice point of the ZnSe buffer layer within a normally forbidden region of reciprocal space indicates that the ZnSe buffer layer is unusually strained, with an appreciable biaxial tensile strain despite the smaller lattice parameter of the III–V substrate relative to ZnSe. We associate such a phenomenon with the presence of the highly strained laser structure coupled with preferential strain relaxation at the II–VI/III–V heterointerface.