The dynamic processes of the free excitonic transitions in GaN grown by metal‐organic chemical‐vapor deposition (MOCVD) have been studied. The recombination lifetimes of the A and B excitons have been measured at different temperatures and excitation intensities, from which radiative recombination lifetimes of about 0.35 and 0.3 ns for the A and B excitons, respectively, have been obtained. An increase in excitation power has resulted in a drastic enhancement in the radiative decay rate as well as in the exciton photoluminescence quantum yield, suggesting the excitonic transitions may provide gain for laser actions in GaN. The high quality as well as high purity of the investigated MOCVD sample has been demonstrated by the observations of (1) the free A‐ and B‐excitonic transitions, (2) excited states of the free excitons, (3) narrow free excitonic emission linewidths (1.7 meV at 10 K), (4) low electron concentration, and (5) high electron mobilities (∼600 cm2/V s).
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1 May 1996
Research Article|
May 01 1996
Free excitonic transitions in GaN, grown by metal‐organic chemical‐vapor deposition
M. Smith;
M. Smith
Department of Physics, Kansas State University, Manhattan, Kansas 66506‐2601
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G. D. Chen;
G. D. Chen
Department of Physics, Kansas State University, Manhattan, Kansas 66506‐2601
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J. Y. Lin;
J. Y. Lin
Department of Physics, Kansas State University, Manhattan, Kansas 66506‐2601
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H. X. Jiang;
H. X. Jiang
Department of Physics, Kansas State University, Manhattan, Kansas 66506‐2601
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M. Asif Khan;
M. Asif Khan
APA Optics, Inc., 2950 N.E. 84th Lane, Blaine, Minnesota 55449
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C. J. Sun;
C. J. Sun
APA Optics, Inc., 2950 N.E. 84th Lane, Blaine, Minnesota 55449
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Q. Chen;
Q. Chen
APA Optics, Inc., 2950 N.E. 84th Lane, Blaine, Minnesota 55449
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J. W. Yang
J. W. Yang
APA Optics, Inc., 2950 N.E. 84th Lane, Blaine, Minnesota 55449
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J. Appl. Phys. 79, 7001–7004 (1996)
Article history
Received:
October 25 1995
Accepted:
January 15 1996
Citation
M. Smith, G. D. Chen, J. Y. Lin, H. X. Jiang, M. Asif Khan, C. J. Sun, Q. Chen, J. W. Yang; Free excitonic transitions in GaN, grown by metal‐organic chemical‐vapor deposition. J. Appl. Phys. 1 May 1996; 79 (9): 7001–7004. https://doi.org/10.1063/1.362448
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