The surface photovoltage (SPV) spectrum due to subband‐gap illumination of thin films is theoretically studied. It is shown that this SPV is inherently sensitive to buried interfaces just as it is sensitive to the external semiconductor surface. The different contributions to the SPV from all the optically active gap states present within a sample, consisting of a bulk substrate covered by a thin film, are analyzed. Analytical expressions are obtained in the low illumination intensity and the depletion approximation regime. The evolution of the SPV spectrum with film thickness is examined and is found to depend on both site and population of the gap states. Three modes of evolution are found, according to the relative importance of gap state population changes with film thickness. These modes are confirmed by a numerical simulation of a thin film of pseudomorphic InAlAs on InP substrates and by experiments conducted on the same system. The approach is also applied to the InP/In2O3 system, revealing gap state formation, followed by filling with electrons, thereby explaining previous observations of nearly ideal I–V behavior at this junction.
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1 June 1996
Research Article|
June 01 1996
Surface photovoltage spectroscopy of thin films
M. Leibovitch;
M. Leibovitch
Department of Electrical Engineering–Physical Electronics, Faculty of Engineering, Tel‐Aviv University, Ramat‐Aviv 69978, Israel
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L. Kronik;
L. Kronik
Department of Electrical Engineering–Physical Electronics, Faculty of Engineering, Tel‐Aviv University, Ramat‐Aviv 69978, Israel
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E. Fefer;
E. Fefer
Department of Electrical Engineering–Physical Electronics, Faculty of Engineering, Tel‐Aviv University, Ramat‐Aviv 69978, Israel
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L. Burstein;
L. Burstein
Department of Electrical Engineering–Physical Electronics, Faculty of Engineering, Tel‐Aviv University, Ramat‐Aviv 69978, Israel
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V. Korobov;
V. Korobov
Department of Electrical Engineering–Physical Electronics, Faculty of Engineering, Tel‐Aviv University, Ramat‐Aviv 69978, Israel
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Yoram Shapira
Yoram Shapira
Department of Electrical Engineering–Physical Electronics, Faculty of Engineering, Tel‐Aviv University, Ramat‐Aviv 69978, Israel
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J. Appl. Phys. 79, 8549–8556 (1996)
Article history
Received:
November 01 1995
Accepted:
February 19 1996
Citation
M. Leibovitch, L. Kronik, E. Fefer, L. Burstein, V. Korobov, Yoram Shapira; Surface photovoltage spectroscopy of thin films. J. Appl. Phys. 1 June 1996; 79 (11): 8549–8556. https://doi.org/10.1063/1.362535
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