A synchrotron x‐ray topography analysis of the impact of the distribution of defects/dislocations on the electrical performance of GaAs power varactor diodes was carried out. Diodes fabricated on or near Liquid Encapsulated Czochralski cellular dislocation networks in the substrate, which are also known to be rich in As precipitates near these cell walls, were observed to have reduced breakdown voltages (VBR). This is consistent with the possibility that the presence of space‐charge cylinders surrounding these dislocations gives rise to reduced VBR if they thread a p‐n junction; it is also in accord with the possibility that the As precipitates themselves can act as sites for local field enhancement, thus promoting premature avalanche breakdown.
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1 June 1996
Research Article|
June 01 1996
Analysis of the impact of dislocation distribution on the breakdown voltage of GaAs‐based power varactor diodes
Patrick J. McNally;
Patrick J. McNally
Microelectronics Research Laboratory, School of Electronic Engineering, Dublin City University, Dublin 9, Ireland
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P. A. F. Herbert;
P. A. F. Herbert
National Microelectronics Research Centre, Lee Maltings, Prospect Row, Cork, Ireland
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T. Tuomi;
T. Tuomi
Optoelectronics Laboratory, Helsinki University of Technology, 02150 Espoo, Finland
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M. Karilahti;
M. Karilahti
Optoelectronics Laboratory, Helsinki University of Technology, 02150 Espoo, Finland
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J. A. Higgins
J. A. Higgins
Science Center Division, Rockwell International Corporation, Thousand Oaks, California 91360
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J. Appl. Phys. 79, 8294–8297 (1996)
Article history
Received:
November 13 1995
Accepted:
February 29 1996
Citation
Patrick J. McNally, P. A. F. Herbert, T. Tuomi, M. Karilahti, J. A. Higgins; Analysis of the impact of dislocation distribution on the breakdown voltage of GaAs‐based power varactor diodes. J. Appl. Phys. 1 June 1996; 79 (11): 8294–8297. https://doi.org/10.1063/1.362470
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