Shoulders have been observed in the measured semilogarithmic current‐voltage (I–V) characteristics of high‐efficiency passivated emitter and rear locally diffused silicon (Si) solar cells. An improved understanding is given of the mechanism proposed to cause these nonideal I–V curves. It is shown that this mechanism is due to the electrostatic behavior of free carriers at the Si/SiO2 interface of oxidized Si devices in which the Si adjacent to the oxide is depleted (or in some cases, inverted) at equilibrium, and results in saturation of the surface recombination rate. Two‐dimensional numerical computer simulations are used to investigate this mechanism and its effect on cell performance. In addition, the simulations provide a means of estimating the extent to which lateral conduction in the rear surface channel also contributes to the observed recombination saturation in these cells. It is shown that ohmic limitation of lateral conduction occurs, however, the lateral current flows are negligible in comparison to the recombination currents due to the former mechanism.
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1 October 1995
Research Article|
October 01 1995
Recombination rate saturation mechanisms at oxidized surfaces of high‐efficiency silicon solar cells
S. J. Robinson;
S. J. Robinson
Centre for Photovoltaic Devices and Systems, University of New South Wales, Sydney 2052, Australia
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S. R. Wenham;
S. R. Wenham
Centre for Photovoltaic Devices and Systems, University of New South Wales, Sydney 2052, Australia
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P. P. Altermatt;
P. P. Altermatt
Centre for Photovoltaic Devices and Systems, University of New South Wales, Sydney 2052, Australia
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A. G. Aberle;
A. G. Aberle
Centre for Photovoltaic Devices and Systems, University of New South Wales, Sydney 2052, Australia
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G. Heiser;
G. Heiser
Centre for Photovoltaic Devices and Systems, University of New South Wales, Sydney 2052, Australia
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M. A. Green
M. A. Green
Centre for Photovoltaic Devices and Systems, University of New South Wales, Sydney 2052, Australia
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J. Appl. Phys. 78, 4740–4754 (1995)
Article history
Received:
April 03 1995
Accepted:
May 19 1995
Citation
S. J. Robinson, S. R. Wenham, P. P. Altermatt, A. G. Aberle, G. Heiser, M. A. Green; Recombination rate saturation mechanisms at oxidized surfaces of high‐efficiency silicon solar cells. J. Appl. Phys. 1 October 1995; 78 (7): 4740–4754. https://doi.org/10.1063/1.359821
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