Phosphorus is one of several dopants that electronically compensate the native deep donor responsible for the yellow coloration observed in bismuth silicon oxide (BSO). Low‐temperature optical absorption measurements of a series of Czochralski‐grown P‐doped BSO crystals show that ∼0.1–0.15 at. % P is needed in the sample to fully remove the yellow coloration. The absorption cutoff in the fully compensated P‐doped sample was at 3.2 eV while compensated Al‐ and Ga‐doped samples cutoff at 3.35 eV. Excitation at 10–15 K with near band‐edge light produces photochromic absorption bands. In the lightly‐doped (partially bleached) samples these bands were identical to those observed in undoped BSO. In the fully bleached sample a new spectrum was observed. Its major contribution was a band centered near 1.8 eV with a weaker absorption in the blue‐green. By comparison with the spectra observed in undoped and in Al‐doped material before and after photoexcitation it is believed that the 1.8 eV band is due to the [PO4]− center and that the broad 2.45 eV band observed in Al‐ and Ga‐doped BSO is due to the [BiO4]0 center.
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1 August 1995
Research Article|
August 01 1995
Low‐temperature photochromic response of phosphorus‐doped bismuth silicon oxide Available to Purchase
J. S. McCullough;
J. S. McCullough
Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078
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Angela Harmon;
Angela Harmon
Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078
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J. J. Martin;
J. J. Martin
Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078
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J. J. Martin;
J. J. Martin
Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078
Rome Laboratory, RL/ERXE, Hanscom AFB, Massachusetts 01731
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M. T. Harris;
M. T. Harris
Rome Laboratory, RL/ERXE, Hanscom AFB, Massachusetts 01731
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J. J. Larkin
J. J. Larkin
Rome Laboratory, RL/ERXE, Hanscom AFB, Massachusetts 01731
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J. S. McCullough
Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078
Angela Harmon
Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078
J. J. Martin
Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078
J. J. Martin
Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078
Rome Laboratory, RL/ERXE, Hanscom AFB, Massachusetts 01731
M. T. Harris
Rome Laboratory, RL/ERXE, Hanscom AFB, Massachusetts 01731
J. J. Larkin
Rome Laboratory, RL/ERXE, Hanscom AFB, Massachusetts 01731
J. Appl. Phys. 78, 2010–2014 (1995)
Article history
Received:
February 16 1995
Accepted:
April 10 1995
Citation
J. S. McCullough, Angela Harmon, J. J. Martin, J. J. Martin, M. T. Harris, J. J. Larkin; Low‐temperature photochromic response of phosphorus‐doped bismuth silicon oxide. J. Appl. Phys. 1 August 1995; 78 (3): 2010–2014. https://doi.org/10.1063/1.360176
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