Ion beam synthesized polycrystalline semiconducting FeSi2 on Si(001) has been investigated by transmission measurements at temperatures between 10 and 300 K. The existence of a minimum direct band gap was demonstrated and its variation with the temperature was studied by means of a three‐parameter thermodynamic model and the Einstein model. Band tail states and states on a shallow impurity level were found to give rise to the absorption below the fundamental edge. The presence of an Urbach exponential edge was shown and the temperature dependence of the Urbach tail width was also studied based on the Einstein model. A strong structural disorder associated with grain boundaries between and within the FeSi2 grains and their related defects was found to be the dominant contribution at room temperature.
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1 August 1995
Research Article|
August 01 1995
Optical absorption study of ion beam synthesized polycrystalline semiconducting FeSi2
Z. Yang;
Z. Yang
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey GU2 5XH, United Kingdom
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K. P. Homewood;
K. P. Homewood
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey GU2 5XH, United Kingdom
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M. S. Finney;
M. S. Finney
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey GU2 5XH, United Kingdom
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M. A. Harry;
M. A. Harry
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey GU2 5XH, United Kingdom
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K. J. Reeson
K. J. Reeson
Department of Electronic and Electrical Engineering, University of Surrey, Guildford, Surrey GU2 5XH, United Kingdom
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J. Appl. Phys. 78, 1958–1963 (1995)
Article history
Received:
February 27 1995
Accepted:
April 17 1995
Citation
Z. Yang, K. P. Homewood, M. S. Finney, M. A. Harry, K. J. Reeson; Optical absorption study of ion beam synthesized polycrystalline semiconducting FeSi2. J. Appl. Phys. 1 August 1995; 78 (3): 1958–1963. https://doi.org/10.1063/1.360167
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