Evidence is presented that the normal operation of evaporated ZnS:Mn alternating‐current thin‐film electroluminescent (ACTFEL) devices involves electron‐hole pair generation by band‐to‐band impact ionization. Four observations are offered to support this assertion. These observations involve: (i) empirical field‐clamping trends, (ii) experimental and simulated trends in charge transfer characteristics, (iii) experimental attempts to assess the interface distribution using a field‐control circuit, and (iv) Monte Carlo simulation trends. Furthermore, the absence of overshoot in measured capacitance‐voltage and internal charge‐phosphor field curves indicates that a majority of the holes created by impact ionization are trapped at or near the phosphor/insulator interface. The multiplication factor (i.e., the total number of electrons transferred across the phosphor divided by the number of electrons injected from the phosphor/insulator cathode interface) is estimated, from device physics simulation of experimental trends, to be of the order 4–8 for evaporated ZnS:Mn ACTFEL devices operating under normal conditions.
Evidence for band‐to‐band impact ionization in evaporated ZnS:Mn alternating‐current thin‐film electroluminescent devices
W. M. Ang, S. Pennathur, L. Pham, J. F. Wager, S. M. Goodnick, A. A. Douglas; Evidence for band‐to‐band impact ionization in evaporated ZnS:Mn alternating‐current thin‐film electroluminescent devices. J. Appl. Phys. 15 March 1995; 77 (6): 2719–2724. https://doi.org/10.1063/1.358741
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