Radiation‐induced defects in a new second harmonic generation material, lithium vanadate single crystal, have been studied by electron paramagnetic resonance (EPR) and optical absorption measurements. EPR detects two intense signals due to intrinsic O− and impurity‐associated CO−3 trapped‐hole centers at 77 K, but no such signal in the case of trapped‐electron centers. The EPR signal of impurity Fe3+ ions is suppressed by 77 K irradiation. Low‐temperature irradiation produces three optical absorption bands peaking at 3.14, 2.0, and 1.56 eV. It has been concluded that some of the free electrons produced by irradiation are trapped by Fe3+ ions at low temperatures. After annealing at room temperature all the optical absorption bands disappear, although the EPR signals of CO−3 trapped‐hole centers and unidentified electron‐type centers at g=1.96 remain stable up to 330 K.
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15 March 1995
Research Article|
March 15 1995
Point defects in irradiated Li3VO4 single crystal Available to Purchase
T. Miki;
T. Miki
Department of Electrical and Electronic Engineering, Yamaguchi University, 2557 Tokiwadai, Ube, Yamaguchi 755, Japan
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T. Murata;
T. Murata
Department of Electrical and Electronic Engineering, Yamaguchi University, 2557 Tokiwadai, Ube, Yamaguchi 755, Japan
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T. Ishii;
T. Ishii
Department of Electrical and Electronic Engineering, Yamaguchi University, 2557 Tokiwadai, Ube, Yamaguchi 755, Japan
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Y. Ebina;
Y. Ebina
Department of Electrical and Electronic Engineering, Yamaguchi University, 2557 Tokiwadai, Ube, Yamaguchi 755, Japan
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S. Sakata;
S. Sakata
Inorganic Materials Research Laboratory, UBE Industries, Kogushi, Ube, Yamaguchi 755, Japan
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I. Fujii
I. Fujii
Inorganic Materials Research Laboratory, UBE Industries, Kogushi, Ube, Yamaguchi 755, Japan
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T. Miki
Department of Electrical and Electronic Engineering, Yamaguchi University, 2557 Tokiwadai, Ube, Yamaguchi 755, Japan
T. Murata
Department of Electrical and Electronic Engineering, Yamaguchi University, 2557 Tokiwadai, Ube, Yamaguchi 755, Japan
T. Ishii
Department of Electrical and Electronic Engineering, Yamaguchi University, 2557 Tokiwadai, Ube, Yamaguchi 755, Japan
Y. Ebina
Department of Electrical and Electronic Engineering, Yamaguchi University, 2557 Tokiwadai, Ube, Yamaguchi 755, Japan
S. Sakata
Inorganic Materials Research Laboratory, UBE Industries, Kogushi, Ube, Yamaguchi 755, Japan
I. Fujii
Inorganic Materials Research Laboratory, UBE Industries, Kogushi, Ube, Yamaguchi 755, Japan
J. Appl. Phys. 77, 2339–2342 (1995)
Article history
Received:
August 29 1994
Accepted:
November 29 1994
Citation
T. Miki, T. Murata, T. Ishii, Y. Ebina, S. Sakata, I. Fujii; Point defects in irradiated Li3VO4 single crystal. J. Appl. Phys. 15 March 1995; 77 (6): 2339–2342. https://doi.org/10.1063/1.359541
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