This paper studies the effects of gate voltage on heat generation and transport in a metal–semiconductor field effect transistor made of gallium arsenide (GaAs) with a gate length of 0.2 μm. Based on the interactions between electrons, optical phonons, and acoustic phonons in GaAs, a self‐consistent model consisting of hydrodynamic equations for electrons and phonons is developed. Concurrent study of the electrical and thermal behavior of the device shows that under a source‐to‐drain bias at 3 V and zero gate bias, the maximum electron temperature rise in this device is higher than 1000 K whereas the lattice temperature rise is of the order of 10 K, thereby exhibiting nonequilibrium characteristics. As the gate voltage is decreased from 0 to −2 V the maximum electron temperature increases due to generation of higher electric fields whereas the maximum lattice temperature reduces due to lower power dissipation. The nonequilibrium hot‐electron effect can reduce the drain current by 15% and must be included in the analysis. More importantly, it is found that the electron temperature rise is nearly independent of the thermal package conductance whereas the lattice temperature rise depends strongly on it. In addition, an increase of lattice temperature by 100 K can reduce the drain current by 25%.
Skip Nav Destination
Article navigation
15 June 1995
Research Article|
June 15 1995
Effect of gate voltage on hot‐electron and hot phonon interaction and transport in a submicrometer transistor
A. Majumdar;
A. Majumdar
Department of Mechanical and Environmental Engineering, University of California, Santa Barbara, California 93106
Search for other works by this author on:
K. Fushinobu;
K. Fushinobu
Department of Mechano‐Aerospace Engineering, Tokyo Institute of Technology, 2‐12‐1 O‐Okayama, Meguro‐ku, Tokyo 152, Japan
Search for other works by this author on:
K. Hijikata
K. Hijikata
Department of Mechano‐Aerospace Engineering, Tokyo Institute of Technology, 2‐12‐1 O‐Okayama, Meguro‐ku, Tokyo 152, Japan
Search for other works by this author on:
J. Appl. Phys. 77, 6686–6694 (1995)
Article history
Received:
September 30 1994
Accepted:
February 16 1995
Citation
A. Majumdar, K. Fushinobu, K. Hijikata; Effect of gate voltage on hot‐electron and hot phonon interaction and transport in a submicrometer transistor. J. Appl. Phys. 15 June 1995; 77 (12): 6686–6694. https://doi.org/10.1063/1.359082
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Piezoelectric thin films and their applications in MEMS: A review
Jinpeng Liu, Hua Tan, et al.
Tutorial: Simulating modern magnetic material systems in mumax3
Jonas J. Joos, Pedram Bassirian, et al.
Related Content
Gamification of learning method in secondary school to enhance student performance
AIP Conf. Proc. (August 2023)
Synthesis of pure titanium nitride layers by multipulse excimer laser irradiation of titanium foils in a nitrogen‐containing atmosphere
J. Appl. Phys. (February 1991)
The warm ionized medium
AIP Conference Proceedings (June 1992)
Electron excited M‐region resonant x‐ray excitation spectra from cerium and oxidized cerium
J. Vac. Sci. Technol. A (November 1990)