Electron‐beam‐pumped lasing in ZnSe epitaxial layers grown by metal‐organic vapor‐phase epitaxy

Stimulated emission and laser action under N₂ laser radiation and electron‐beam excitation at room temperature was studied in ZnSe epitaxial layers grown by metal‐organic vapor‐phase epitaxy. The laser threshold was about I_thr=1 MW/cm², the pulse energy was E_em=0.3 μJ at the excitation intensity of I_exc=26 MW/cm². The duration was t_em=2 ns and the wavelength was λ_em=473.2–475.2 nm. Stimulated emission and laser action are due to the recombinations in a high‐density electron‐hole plasma at I_exc≳I_thr. The light amplification takes place in both the Fabry–Pérot cavity and in the scheme of the zig‐zag ray propagation inside the crystal without feedback.