In the phase‐coherent transport regime the possibility of a solid‐state electron biprism employing an intentionally implanted impurity in a split‐gate heterostructure is theoretically studied. The impurity‐assisted interference phenomenon has been investigated under several impurity profiles and positions within the constriction. The effect of gate width on quenching the interference has also been considered. A quantitative explanation is offered which is based on the Fourier analysis of the wave function at the aperture and the guided‐mode dynamics within the constriction.
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