The formation and dissolution of Si‐O‐Al precipitates have been investigated in Czochralski silicon wafers implanted with 6 MeV Al ions and thermally processed. The data have been compared to the O precipitation in samples implanted with 6 MeV Si or P ions. The amount of precipitated O atoms is about one order of magnitude higher for Al than for Si or P implanted samples. Moreover, a strong gettering of the Al atoms by the silicon dioxide precipitates has been observed. The precipitate evolution has been studied for different annealing times and temperatures. The oxygen precipitation has been simulated by the classical theory of nucleation and growth, with the introduction of new factors that take into account the implant damage distribution, the agglomeration of point defects during the initial stages of the annealing and the oxygen outdiffusion from the sample surface.
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15 August 1994
Research Article|
August 15 1994
Al‐O interactions in ion‐implanted crystalline silicon Available to Purchase
G. Galvagno;
G. Galvagno
CORIMME, Stradale Primosole 50, 95121 Catania, Italy
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A. La Ferla;
A. La Ferla
Dipartimento di Fisica, Universitá di Catania, Corsa Italia 57, 95129 Catania, Italy
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C. Spinella;
C. Spinella
Istituto di Metodologie e Tecnologie per la Microelettronica, CNR, Stradale Primosole 50, 95121 Catania, Italy
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F. Priolo;
F. Priolo
Dipartimento di Fisica, Universitá di Catania, Corsa Italia 57, 95129 Catania, Italy
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V. Raineri;
V. Raineri
CORIMME, Stradale Primosole 50, 95121 Catania, Italy
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Lucio Torrisi;
Lucio Torrisi
CORIMME, Stradale Primosole 50, 95121 Catania, Italy
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E. Rimini;
E. Rimini
Dipartimento di Fisica, Universitá di Catania, Corsa Italia 57, 95129 Catania, Italy
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A. Carnera;
A. Carnera
Dipartimento di Fisica, Universitá di Padova, via Marzolo 8, 35131 Padova, Italy
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A. Gasparotto
A. Gasparotto
Dipartimento di Fisica, Universitá di Padova, via Marzolo 8, 35131 Padova, Italy
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G. Galvagno
A. La Ferla
C. Spinella
F. Priolo
V. Raineri
Lucio Torrisi
E. Rimini
A. Carnera
A. Gasparotto
CORIMME, Stradale Primosole 50, 95121 Catania, Italy
J. Appl. Phys. 76, 2070–2077 (1994)
Article history
Received:
August 05 1993
Accepted:
April 26 1994
Citation
G. Galvagno, A. La Ferla, C. Spinella, F. Priolo, V. Raineri, Lucio Torrisi, E. Rimini, A. Carnera, A. Gasparotto; Al‐O interactions in ion‐implanted crystalline silicon. J. Appl. Phys. 15 August 1994; 76 (4): 2070–2077. https://doi.org/10.1063/1.357616
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