Beneficial features of boron multiple delta doping (MDD) in synthetic diamond thin films are studied analytically and compared with MDD in GaAs. In spite of a deep boron level (∼0.3 eV), MDD greatly helps the thermal excitation of holes via elevation of the Fermi level toward the acceptor boron level. Thus, a hole excitation 6–7 times higher than that of the uniformly doped one is obtained. Furthermore, more than 90% of holes are in the spacer layer (i‐diamond) where the mobility is high, resulting in a film conductance of the MDD structure more than 20 times higher than that of the conventional one when the same amount of boron is uniformly doped.
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