Two Si atomic layer epitaxy schemes based on Cl/H exchange chemistry are compared by deposition of Si on Ge(100). Time‐of‐flight direct recoiling and reflection high‐energy electron diffraction are used to characterize the very thin Si layers. It is shown that alternating exposure to SiCl2H2 and atomic hydrogen deposits Si in a process that is self‐limiting. Growth of Si by this method results in either alloy formation or Si island growth as low as 465 °C on Ge(100), which prohibits a simple measurement of Si thickness/cycle. In contrast, alternating exposure to Si2Cl6 and Si2H6 below 500 °C results in Si deposition with uniform thickness. Plots of direct recoil intensity versus incident angle (with respect to the surface plane) are a sensitive probe of the thin layer morphology.

1.
Atomic Layer Epitaxy, edited by T. Suntola and M. Simpson (Chapman and Hail, New York, 1990).
2.
C. H. L.
Goodman
and
M. V.
Pessa
,
J. Appl. Phys.
60
,
R65
(
1986
).
3.
S. M.
Gates
,
J. Phys. Chem.
96
,
10
439
(
1992
).
4.
D. D.
Koleske
,
S. M.
Gates
, and
D. B.
Beach
,
Appl. Phys. Lett.
61
,
1802
(
1992
).
5.
D.
Lubben
,
R.
Tsu
,
T. R.
Bramblett
, and
J. E.
Greene
,
J. Vac. Sci. Technol. A
9
,
3003
(
1991
).
6.
Y.
Takahashi
and
T.
Urisu
,
Jpn. J. Appl. Phys.
30
,
L209
(
1991
).
7.
J.
Nishizawa
,
K.
Aoki
,
S.
Suzuki
, and
K.
Kikuchi
,
J. Electrochem. Soc.
137
,
1898
(
1990
).
8.
R. G.
McIntosh
,
P. C.
Colter
, and
S. M.
Bedair
,
Thin Solid Films
225
,
183
(
1993
).
9.
S.
Imai
,
T.
Iizuka
,
O.
Sugiura
, and
M.
Matsumura
,
Thin Solid Films
225
,
168
(
1993
).
10.
S. M.
Gates
,
D. D.
Koleske
,
J. R.
Heath
, and
M.
Copel
,
Appl. Phys. Lett.
62
,
510
(
1993
).
11.
D. D.
Koleske
,
S. M.
Gates
, and
D. B.
Beach
,
J. Appl. Phys.
72
,
4073
(
1992
).
12.
D. D.
Koleske
and
S. M.
Gates
,
J. Appl. Phys.
74
,
4245
(
1993
).
13.
H.
Kawabata
,
H.
Ueba
, and
C.
Tatsuyama
,
J. Appl. Phys.
66
,
634
(
1989
).
14.
P. M. J.
Maree
,
K.
Nakagawa
,
F. M.
Mulders
, and
J. F.
van der Veen
,
Surf. Sci.
191
,
305
(
1987
).
15.
M.
Copel
,
M. C.
Reuter
,
M.
Horn von Hoegen
, and
R. M.
Tromp
,
Phys. Rev. B
42
,
11682
(
1990
).
16.
D.-S.
Lin
,
T.
Miller
, and
T.-C.
Chiang
,
Phys. Rev. B
47
,
6543
(
1993
).
17.
K.
Fujita
,
S.
Fukatsu
,
H.
Yaguchi
,
T.
Igarashi
,
Y.
Shiraki
, and
R.
Ito
,
Jpn. J. Appl. Phys.
29
,
L1981
(
1990
).
18.
H. J.
Osten
,
E.
Bugiel
, and
J.
Klatt
,
Appl. Phys. Lett.
61
,
1918
(
1992
);
H. J.
Osten
,
G.
Lippert
, and
J.
Klatt
,
J. Vac. Sci. Technol. B
10
,
1151
(
1992
).
19.
A polycrystalline or amorphous film would be easily detected by MEIS, with the same He+ scattered intensity in aligned and random geometries.
20.
J. W.
Rabalais
,
CRC Crit. Rev. Solid State Mater. Sci.
14
,
319
(
1988
);
J. W.
Rabalais
,
Science
250
,
522
(
1990
).
21.
S. M.
Gates
and
S. K.
Kulkarni
,
Appl. Phys. Lett.
60
,
53
(
1992
).
22.
S. M.
Cohen
,
T. I.
Hukka
,
Y. L.
Yang
, and
M. P.
D’Evelyn
,
Thin Solid Films
225
,
155
(
1993
).
23.
L.
Surnev
and
M.
Tikhov
,
Surf. Sci.
138
,
40
(
1984
).
24.
L. Y. L.
Shen
,
Surf. Sci.
47
,
685
(
1975
).
25.
W. K.
Liu
,
S. M.
Mokler
,
N.
Ohtani
, and
C.
Roberts
,
B. A.
Joyce
,
Surf. Sci.
264
,
301
(
1992
).
26.
D. D.
Koleske
and
S. M.
Gates
,
Appl. Phys. Lett.
64
,
884
(
1994
).
27.
R.
Tsu
,
D.
Lubben
,
T. R.
Bramblett
,
J. E.
Greene
,
D.-S.
Lin
, and
T.-C.
Chiang
,
Surf. Sci.
280
,
265
(
1993
).
This content is only available via PDF.
You do not currently have access to this content.