In this paper it is demonstrated that Raman spectroscopy can be used for insitu online monitoring of semiconductor layer growth. For this purpose an ultra‐high‐vacuum chamber was designed to suit molecular beam epitaxial growth as well as simultaneous optical measurements utilizing a multichannel detection Raman system. As a result Raman spectra can be taken while growth progresses. As shown by the example of InSb growth, they provide information on the interface chemistry, crystal quality of the growing layer, and the growth mode as well.

1.
D. E.
Aspnes
,
W. E.
Quinn
, and
S.
Gregory
,
J. Vac. Sci. Technol. A
9
,
870
(
1991
).
2.
J. P.
Harbison
,
D. E.
Aspnes
,
A. A.
Studna
,
L. T.
Florez
, and
M. K.
Kelly
,
Appl. Phys. Lett.
52
,
2046
(
1988
).
3.
H.
Brugger
,
F.
Schäffler
, and
G.
Abstreiter
,
Phys. Rev. Lett.
52
,
141
(
1984
).
4.
M.
Hünermann
,
J.
Geurts
, and
W.
Richter
,
Phys. Rev. Lett.
66
,
640
(
1991
).
5.
J. P.
Delrue
,
R.
Sporken
, and
R.
Caudano
,
J. Vac. Sci. Technol. A
4
,
754
(
1986
).
6.
R.
Sporken
,
P.
Louette
,
R.
Caudano
,
J.
Barth
,
J.
Ghijsen
,
R. L.
Johnson
, and
H. W.
Richter
,
J. Vac. Sci. Technol. B
5
,
1057
(
1987
).
7.
V. Ruth and J. P. Hirth, in Condensation and Evaporation of Solids, edited by E. Rutner, P. Goldfinger, and J. P. Hirth (Gordon and Breach, New York, London, 1962).
8.
W. Richter, Resonant Raman Scattering in Semiconductors, in Springer Tracts in Modern Physics 78, edited by G. Hoehler (Springer, Berlin, 1976).
9.
M. L.
Bansal
and
A. P.
Roy
,
Phys. Rev. B
33
,
1526
(
1986
).
10.
M.
Ramsteiner
,
C.
Wild
, and
J.
Wagner
,
Appl. Optics
28
,
4017
(
1989
).
11.
D. E.
Aspnes
and
A. A.
Studna
,
Phys. Rev. B
27
,
985
(
1983
).
12.
G. M.
Williams
,
C. R.
Whitehouse
,
T.
Martin
,
N. G.
Chew
,
A. G.
Cullis
,
T.
Ashley
,
D. E.
Sykes
,
K.
Mackey
, and
R. H.
Williams
,
J. Appl. Phys.
63
,
1526
(
1988
).
13.
V. Wagner, D. Drews, D. R. T. Zahn, J. Geurts, and W. Richter (unpublished).
14.
D. R. T.
Zahn
,
Adv. Mater. Opt. Electron.
3
,
3
(
1994
).
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