Semiconductor lasers directly photopumped by focused sunlight may be viable sources of coherent light for intersatellite communications and other low‐power spaceborne applications. In this work, we theoretically explore the possibility of realizing such devices. We specifically assess solar pumped operation of separate‐confinement‐quantum‐well heterostructure (SCQWH) lasers based on InGaAs, GaAs, and AlGaAs, as fabrication technology for these lasers is mature and they can operate at very low thresholds. We develop a model for step‐index single‐well SCQWH lasers photopumped by sunlight, examine how threshold solar photoexcitation intensities (or solar magnification requirements) depend upon material and structure parameters, design optimum structures for solar‐pumped operation, and identify design trade offs. Our results suggest that laser action should be possible in properly designed structures at readily achievable solar concentrations (103–104 suns under air‐mass‐zero conditions), and that optimum designs for solar‐pumped SCQWH lasers differ significantly from those for analogous current injection devices.
Skip Nav Destination
Article navigation
15 September 1993
Research Article|
September 15 1993
Quantum‐well lasers for direct solar photopumping
Sreenath Unnikrishnan;
Sreenath Unnikrishnan
Department of Electrical and Computer Engineering, University of Massachusetts at Amherst, Amherst, Massachusetts 01003
Search for other works by this author on:
Neal G. Anderson
Neal G. Anderson
Department of Electrical and Computer Engineering, University of Massachusetts at Amherst, Amherst, Massachusetts 01003
Search for other works by this author on:
J. Appl. Phys. 74, 4221–4228 (1993)
Article history
Received:
January 04 1993
Accepted:
June 07 1993
Connected Content
A correction has been published:
Erratum: ‘‘Quantum‐well lasers for direct solar photopumping’’ [J. Appl. Phys. 74, 4221 (1993)]
Citation
Sreenath Unnikrishnan, Neal G. Anderson; Quantum‐well lasers for direct solar photopumping. J. Appl. Phys. 15 September 1993; 74 (6): 4221–4228. https://doi.org/10.1063/1.354427
Download citation file:
Sign in
Don't already have an account? Register
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Sign in via your Institution
Sign in via your InstitutionPay-Per-View Access
$40.00
Citing articles via
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
GaN-based power devices: Physics, reliability, and perspectives
Matteo Meneghini, Carlo De Santi, et al.

