The transport properties of the two‐dimensional electron gas in selectively doped AlyGa1−yAs/InxGa1−xAs/GaAs pseudomorphic structures grown by molecular beam epitaxy are studied. The mobility in the temperature range from 1.7 to 300 K is reported based on the Hall effect and high‐field magnetoconductance measurements. The relative strengths of various scattering mechanisms are assessed through a numerical iterative solution of the Boltzmann equation and compared with the experimental Hall mobility versus temperature data. Comparison shows that at low temperature, alloy scattering determines the low‐field mobility with a suitable choice of alloy scattering potential. At room temperature, polar‐optical phonon scattering is the dominant mechanism. However, alloy scattering also contributes in reducing the room‐temperature mobility by approximately 20% compared to polar optical scattering alone.
Two‐dimensional electron transport in selectively doped n‐AlGaAs/InGaAs/GaAs pseudomorphic structures
Keya Bhattacharyya, J. O. Orwa, S. M. Goodnick; Two‐dimensional electron transport in selectively doped n‐AlGaAs/InGaAs/GaAs pseudomorphic structures. J. Appl. Phys. 1 May 1993; 73 (9): 4396–4403. https://doi.org/10.1063/1.352777
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