Electronic properties of n‐i‐n‐i doping superlattices

Band structures of n‐i‐n‐i doping superlattices are found using a self‐consistent calculation based on the envelope function formalism. The modulation potentials, the charge density distributions, the dispersion relationships, and the occupation of the subbands in the n‐i‐n‐i superlattices are computed and their dependence on temperature and the structural parameters of the superlattices are studied. It is found that the modulation potentials of n‐i‐n‐i doping superlattices are weak, and quantum effects are, therefore, also weak. The density of states in n‐i‐n‐i superlattices can be adjusted by varying the structural parameters of the superlattices. As a result, the n‐i‐n‐i doping superlattices behave like uniformly doped semiconductors with an adjustable density of states. The density of states is found to be temperature dependent. Electron mobilities of the n‐i‐n‐i doping superlattices are also computed. It is found that both impurity scattering processes that are observed in uniform lightly doped semiconductor and heavily doped semiconductor can coexist in the n‐i‐n‐i doping superlattices.