The dependence of majority carrier mobility on carrier concentration at 77 K in Hg0.78Cd0.22Te has been studied by Hall measurements on about 190 n‐type and 360 p‐type liquid phase epitaxial films. The n‐type films were indium doped with the carrier concentration varying from 1×1014 to 2×1016 cm−3. The measured electron mobility changed from 2×105 to 8×104 cm2/V s. The p‐type films were undoped (Hg vacancy) with the carrier concentration varying from 2×1015 to 3×1017 cm−3. The measured hole mobility changed from 600 to 200 cm2/V s. By comparing calculated mobility curves with the experimental data, we found that the major scattering mechanisms for electron mobility in n‐type materials were polar optical phonon, ionized impurity, and alloy disorder scatterings. These three scattering mechanisms also dominate the hole mobility in p‐type materials at 77 K. It was also found that a model with Hg vacancy as doubly ionized shallow acceptors fitted very well the hole mobility versus carrier concentration data.

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