The energy levels of defect states in nanometer‐sized amorphous silicon nitride solids were systematically studied in terms of ultraviolet emission spectra. Six emission bands were observed, corresponding to 3.2, 2.8, 2.7, 2.4, 2.3, and 2.0 eV, respectively. With increasing the heat‐treated temperature from room temperature to 1000 °C in low vacuum, these emission bands became high. For the specimen heated at 1000 °C, a new emission band of 3.0 eV appeared. The appearance of these emission bands is closely related to the formation of the energy levels of the defect states in the energy gap. The origin of these emission bands are discussed in detail.
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© 1993 American Institute of Physics.
1993
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