Hydrogenated amorphous silicon films have been deposited by dc magnetron sputtering on different substrates with different thicknesses and hydrogen concentration. The microscopic area of amorphous layers was crystallized by the focused beam of a cw laser. The laser threshold power for transition from the amorphous to crystalline state is dependent on the radius of the laser beam, film thickness, material of the substrate, and hydrogen concentration. These experimental results show that cw laser crystallization of amorphous silicon is a thermally induced process.

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