Molecular‐beam‐epitaxial GaAs grown at 200 °C has an extremely high (≳1019 cm−3) concentration of AsGa defects and, after an anneal at 550–600 °C, a high concentration of As precipitates. The relative roles of the AsGa defects and As precipitates in compensation and conductivity is controversial. Here criteria are developed to distinguish between two existing models.

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