On compensation and conductivity models for molecular‐beam‐epitaxial GaAs grown at low temperature

Molecular‐beam‐epitaxial GaAs grown at 200 °C has an extremely high (≳10¹⁹ cm⁻³) concentration of As_Ga defects and, after an anneal at 550–600 °C, a high concentration of As precipitates. The relative roles of the As_Ga defects and As precipitates in compensation and conductivity is controversial. Here criteria are developed to distinguish between two existing models.