Monte Carlo calculation has been applied to investigate the temperature and compensation dependence of steady‐state electron transport in n‐type GaAs over a wide range of applied field strengths. It is found that doping compensation has stronger effect on the transport properties at low temperatures than at high temperatures. Compensation‐enhanced impurity scattering is responsible for the reduction not only in low‐field mobilities and peak velocities but also in the negative differential mobilities and the high‐field velocities. The two‐maxima behavior in the velocity‐field characteristics persists at low temperatures through room temperatures for high doping compensation then it starts to diminish at 450 K except for compensation ratio of 0.9. The physical origin of this unique two maxima feature in the velocity‐field relation has been discussed in comparison with other compensated semiconductors.

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