Single‐crystal films of τ‐MnAl are grown by molecular‐beam epitaxy on GaAs substrates. The extraordinary Hall effect shows a large hysteresis loop, and the magnetization is found to have a substantial component perpendicular to the plane of the film.
Galvanomagnetic properties of epitaxial MnAl films on GaAs
M. L. Leadbeater, S. J. Allen, F. DeRosa, J. P. Harbison, T. Sands, R. Ramesh, L. T. Florez, V. G. Keramidas; Galvanomagnetic properties of epitaxial MnAl films on GaAs. J. Appl. Phys. 15 April 1991; 69 (8): 4689–4691. https://doi.org/10.1063/1.348298
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