Single crystals of n‐Hg1−xCdxTe (x=0.18) were grown by the Bridgman technique. The bulk single crystals were irradiated with laser pulses of various energy densities. A pulsed laser (Nd:YAG) capable of producing 10‐ns pulses of 0.53‐μm wavelength (frequency doubled) with varying energy densities (2–50 mJ/cm2) was employed. dc conductivity and Hall coefficient measurements were made on the single crystal using the van der Pauw technique in the temperature range 77–300 K, for both as‐grown and laser‐irradiated samples. Also, transmission measurements of the samples were taken at room temperature. Both electrical and optical studies showed that laser irradiation introduces additional defects in mercury cadmium telluride (MCT), and its quality deteriorates instead of improving as observed in many other semiconductor materials. We found that laser irradiation increases free‐carrier concentration and decreases the band gap of MCT.
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1 April 1991
Research Article|
April 01 1991
Effect of laser annealing on electrical and optical properties of n‐mercury cadmium telluride
A. L. Dawar;
A. L. Dawar
Department of Physics and Astrophysics, University of Delhi, Delhi‐110 007, India
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Savita Roy;
Savita Roy
Department of Physics and Astrophysics, University of Delhi, Delhi‐110 007, India
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Tirlok Nath;
Tirlok Nath
Department of Physics and Astrophysics, University of Delhi, Delhi‐110 007, India
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Sanjay Tyagi;
Sanjay Tyagi
Department of Physics and Astrophysics, University of Delhi, Delhi‐110 007, India
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P. C. Mathur
P. C. Mathur
Department of Physics and Astrophysics, University of Delhi, Delhi‐110 007, India
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J. Appl. Phys. 69, 3849–3852 (1991)
Article history
Received:
November 01 1990
Accepted:
December 06 1990
Citation
A. L. Dawar, Savita Roy, Tirlok Nath, Sanjay Tyagi, P. C. Mathur; Effect of laser annealing on electrical and optical properties of n‐mercury cadmium telluride. J. Appl. Phys. 1 April 1991; 69 (7): 3849–3852. https://doi.org/10.1063/1.348440
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