We present a new analytical potential fluctuations model for the interpretation of current/voltage and capacitance/voltage measurements on spatially inhomogeneous Schottky contacts. A new evaluation schema of current and capacitance barriers permits a quantitative analysis of spatially distributed Schottky barriers. In addition, our analysis shows also that the ideality coefficient n of abrupt Schottky contacts reflects the deformation of the barrier distribution under applied bias; a general temperature dependence for the ideality n is predicted. Our model offers a solution for the so‐called T0 problem. Not only our own measurements on PtSi/Si diodes, but also previously published ideality data for Schottky diodes on Si, GaAs, and InP agree with our theory.
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Research Article| February 01 1991
Barrier inhomogeneities at Schottky contacts
Jürgen H. Werner;
Jürgen H. Werner, Herbert H. Güttler; Barrier inhomogeneities at Schottky contacts. J. Appl. Phys. 1 February 1991; 69 (3): 1522–1533. https://doi.org/10.1063/1.347243
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