Quantum‐well structures of InAlP/InGaP grown by gas‐source molecular‐beam epitaxy Available to Purchase

Both single quantum‐well (SQW) and multiple quantum‐well (MQW) structures have been produced using the technique of gas‐source molecular‐beam epitaxy to grow the two wide band‐gap ternary alloys, InAlP and InGaP. SQWs as narrow as two monolayers observed by bright field Transmission Electron Microscopy were found to be laterally uniform with abrupt InAlP/InGaP interfaces. Photoluminescence of SQWs of differing thickness produced a larger quantum confinement energy shift than expected, with emission at 570 nm for an InGaP well of 3.0 nm in thickness. The number and amplitude of peaks detected in double‐crystal x‐ray diffraction (DCXR) measurements of the MQW samples matched, to within the limit of the dynamic range of the DCXR system, the peaks calculated in a periodic two‐layer dynamical simulation of the x‐ray rocking curve.