A systematic Fourier‐transformed infrared‐spectroscopy study of oxygen and carbon in isolated form and as complexes in the silicon lattice has revealed a direct correlation between the decrease of substitutional carbon concentration and the decrease of interstitial oxygen concentration during 750 °C annealing. At a concentration exceeding 2 ppma, carbon was also found to enhance oxide precipitate growth. After completing a three‐step annealing (1100 °C+750 °C+1000 °C), an oxide‐precipitate‐related IR‐absorption band was observed. The changes of the IR‐absorption band were correlated with annealing‐induced changes in the state of carbon. A direct incorporation of carbon into oxide precipitates, and/or carbon interaction with silicon self‐interstitials generated during oxygen precipitation, are suggested to have an effect on reducing lattice strain associated with the oxygen‐precipitation process.
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1 May 1990
Research Article|
May 01 1990
Effect of carbon on oxygen precipitation in silicon
Q. Sun;
Q. Sun
Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
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K. H. Yao;
K. H. Yao
Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
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J. Lagowski;
J. Lagowski
Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
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H. C. Gatos
H. C. Gatos
Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
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J. Appl. Phys. 67, 4313–4319 (1990)
Article history
Received:
October 16 1989
Accepted:
January 15 1990
Citation
Q. Sun, K. H. Yao, J. Lagowski, H. C. Gatos; Effect of carbon on oxygen precipitation in silicon. J. Appl. Phys. 1 May 1990; 67 (9): 4313–4319. https://doi.org/10.1063/1.344947
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