Previous models for use in calculating the carrier freezeout effects in n‐type Si at low temperature are extended to include the sixfold degeneracy of excited states and the fine structure of the ground state resulting from considerations of group theory. The results are in good agreement with experimental Hall‐effect measurements. For n‐type Si with doping in the range of 8×1017–2×1019 cm−3, a method is proposed to estimate the electron concentration and mobilities in the conduction band and in the first excited impurity band at a given temperature.
REFERENCES
1.
2.
3.
See, for example, R. A. Smith, Semiconductors, 2nd ed. (Cambridge University, Cambridge, 1978), Sec. 4.3.
4.
J. S. Blaketnore, Semiconductor Statistics (MacMillan, New York, 1962), Chap. 3.
5.
6.
7.
8.
9.
10.
11.
B. I. Shkiovskii and A. L. Efros, Electronic Properties of Doped Semiconductors (Springer, New York, 1984), Sec. 12.
12.
13.
See, for example, J. P. McKelvey, Solid State and Semiconductor Physics (Harper and Row, New York, 1966), Sec. 9.10.
14.
W. R. Runyart, Semiconductor Measurements and Instrumentation (McGraw‐Hill, New York, 1975), Sec. 5.2.
15.
16.
This content is only available via PDF.
© 1989 American Institute of Physics.
1989
American Institute of Physics
You do not currently have access to this content.
