It is shown that a voltage‐biased semiconductor superlattice structure can serve simultaneously as a tunable electron‐wave interference filter and electron emitter. A systematic design procedure for selecting the quantum well and barrier widths to be alternately high and low electron refractive indices and a quarter (or a half) of an electron wavelength in thickness is developed. A practical narrow‐band filter/emitter consisting of layers of Ga1−xAlxAs and designed to emit 0.20‐eV electrons is presented and analyzed. Such a structure would serve well as a tunable hot‐electron emitter in ballistic transistors, and in future guided electron‐wave integrated circuits.
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© 1989 American Institute of Physics.
1989
American Institute of Physics
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