We have found that in lattice‐mismatched partially strained InGaAs/GaAs heterostructures, defect states caused by misfit dislocations can be neutralized by hydrogenation. This was concluded from the effect of hydrogen on the photoluminescence spectra of partially strained GaAs/In0.17Ga0.83As/GaAs quantum wells. Hydrogenation was also found to significantly increase the band‐gap emission of structures with layer thicknesses well above the critical layer thickness for the given composition.
REFERENCES
1.
L. J.
Fritz
, L. R.
Dawson
, and T. E.
Ziperian
, J. Vac. Sci. Technol. B
1
, 387
(1983
).2.
N. G.
Anderson
, W. D.
Laidig
, R. M.
Kolbas
, and Y. C.
Lo
, J. Appl. Phys.
60
, 2361
(1986
).3.
P. L.
Gourley
, R. M.
Biefeld
, and L. R.
Dawson
, Appl. Phys. Lett.
47
, 482
(1985
).4.
P. L.
Gourley
, L. J.
Fritz
, and L. R.
Dawson
, Appl. Phys. Lett.
52
, 377
(1988
).5.
6.
S. J.
Pearton
, J. W.
Corbett
, and T. S.
Shi
, Appl. Phys. A
43
, 153
(1987
).7.
W. C.
Dautremont‐Smith
, Mater. Res. Soc. Symp. Proc.
104
, 313
(1988
).8.
S. J.
Pearton
, C. S.
Wu
, M.
Stravolta
, F.
Ren
, J.
Lopata
, W. C.
Dautremont‐Smith
, S. M.
Vernon
, and V. E.
Haven
, Appl. Phys. Lett.
51
, 496
(1987
).9.
M.
Gal
, P. J.
Orders
, B. F.
Usher
, M. J.
Joyce
, and J.
Tann
, Appl. Phys. Lett.
53
, 113
(1988
).
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© 1989 American Institute of Physics.
1989
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