Theoretical calculations are presented for the figure of merit Z in thermoelectrics. The maximum values of Z are obtained in semiconductors which are doped so that the chemical potential is near the band edge. The highest Z is related to the B parameter of Chasmar and Stratton [J. Electron. Control 7, 52 (1959)].
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© 1989 American Institute of Physics.
1989
American Institute of Physics
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