The damage of silicon induced by low‐energy (30 eV) CF4 discharges in a rf hollow oval magnetron system has been studied. The damage level was evaluated by the surface trap density measured by the high‐low frequency capacitance‐voltage method. By comparison with the results obtained using low‐energy Ar discharges and other high‐energy (450 eV) CF4 and Ar discharges, the involatile reaction residue was inferred as the major cause of damage in the low‐energy CF4 discharges.
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© 1988 American Institute of Physics.
1988
American Institute of Physics
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