Photoluminescence (PL) and transmission electron microscopy have been used to study strained InxGa1−xAs/GaAs (x=0.24–0.28) quantum wells (QWs) grown by molecular‐beam epitaxy. The three QWs grown without growth interruptions produce high intensity PL peaks of narrow full width at half‐maximum (2.9 meV). On the other hand, the PL peaks in the QWs grown with 30‐s interruptions are relatively broad, less symmetric, and show lower PL intensities, compared with the noninterrupted QWs. Our results show that high‐quality strained InxGa1−xAs/GaAs QWs can be grown without growth interruptions.
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1988
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